2SB139100MA hangzhou?silan?microelectronics?co.,ltd rev:1.0???????2007.04.27 http:?www.silan.com.cn???????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?1?of?1 2SB139100MA?low?i r ?schottky?barrier?diode?chips description ? ? 2SB139100MA? is? a schottky? barrier? diode? chips fabricated?in?silicon?epitaxial?planar?technology; ? ? due?to?special?schottky?barrier?structure,?the ??chips have? very? low? reverse? leakage? current? (? typ ical i r =0.002ma@? vr=100v? )? and? maximum? 150 c operation?junction?temperature; ? ? low?power?losses,?high?efficiency; ? ? guard?ring?construction?for?transient?protection; ? ? high?esd?capability; ? ? high?surge?capability; ? ? packaged?products?are?widely?used?in?switching power?suppliers,?polarity?protection?circuits?and other?electronic?circuits; ? ? chip?size:?1390 m m?x?1390 m m; ? chip?thickness:?28020 m m; l b l a chip?topography?and?dimensions la:?chip?size:?1.390mm; lb:?pad?size:?1.295mm; ordering?specifications product?name specification 2SB139100MAyy for?axial?leads?package absolute?maximum?ratings parameters symbol ratings unit maximum?repetitive?peak?reverse?voltage v rrm 100 v average?forward?rectified?current i fav 3 a peak?forward?surge?current@8.3ms i fsm 80 a maximum?operation?junction??temperature t j 150 c storage?temperature?range t stg -40~150 c electrical?characteristics ?(t amb =25 ) parameters symbol test?conditions min. max. unit reverse?voltage v br i r =0.5ma 100 -- v forward?voltage v f i f =3a -- 0.85 v reverse?current i r v r =100v -- 0.5 ma
|
